CHEMICAL DISSOLUTION InAs, InSb, GaAs AND GaSb IN THE (NH4)2Cr2O7−HBr−H2O ETCHING COMPOSITIONS

Self-assembled InSb and GaSb quantum dots on GaAs(001)

Quantum dots of InSb and GaSb were grown on GaAs~001! by molecular-beam epitaxy. In situ scanning tunneling microscopy measurements taken after 1–2 monolayers of InSb or GaSb growth reveal the surface is a network of anisotropic ribbon-like platelets. These platelets are a precursor to quantum dot growth. Transmission electron microscopy measurements indicate that the quantum dots are coherentl...

Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb

The properties of a semiconductor are drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band structure and deformation potentials subject to various strains based on hybrid density functional theory. Guided by these first-principles resu...

Influence of growth direction and strain conditions on the band lineup at GaSb/InSb and InAs/InSb interfaces.

First-principles full potential linearized augmented plane wave (FLAPW) calculations have been performed for lattice-mismatched common-atom III-V interfaces. In particular, we have examined the effects of epitaxial strain and ordering direction on the valence band offset in [001] and [111] GaSb/InSb and InAs/InSb superlattices, and found that the valence band maximum is always higher at the InS...

Effects of epitaxial strain and ordering direction on the electronic properties of GaSb/InSb and InAs/InSb superlattices.

The structural and electronic properties in common-anion (GaSb) 1 /(InSb) 1 and common-cation (InAs) 1 /(InSb) 1 [111] ordered super-lattices have been determined using the local density total energy full potential linearized augmented plane wave method. The influence of the ordering direction, strain conditions and atomic substitution on the electronic properties of technological and experimen...

Hybrid Type-I InAs/GaAs and Type-II GaSb/GaAs Quantum Dot Structure with Enhanced Photoluminescence